Semiconductor device and method for fabricating the same

ABSTRACT

A semiconductor device includes: a conductive plug formed through an insulating film; a conductive oxygen barrier film formed on the insulating film so as to be electrically connected to the conductive plug and to cover the conductive plug; a lower electrode formed on the oxygen barrier film and connected to the oxygen barrier film; a capacitive insulating film formed on the lower electrode, following the lower electrode; and an upper electrode formed on the capacitive insulating film, following the capacitive insulating film. The capacitive insulating film has a bent portion that extends along the direction in which the conductive plug penetrates through the insulating film.

BACKGROUND OF THE INVENTION

The present invention relates to semiconductor devices includingcapacitors, especially capacitors in which ferroelectrics or high-κmaterials are used for capacitive insulating films, and methods forfabricating the same.

Ferroelectrics or high-κ materials exhibit remanent polarization due tohysteresis properties or high relative dielectric constants. Thus, inthe field of nonvolatile memories or DRAM devices, the ferroelectrics orthe high-κ materials can substitute for silicon oxide or silicon nitrideused for capacitive insulating films included in capacitors ofsemiconductor devices.

Hereinafter, a known method for fabricating a semiconductor deviceincluding a capacitor in which a ferroelectric or a high-κ material isused for a capacitive insulating film will be described with referenceto the drawings.

First, as shown in FIG. 19A, a transistor region 103 is defined by anisolation film 102 selectively formed in a semiconductor substrate 101of silicon. Thereafter, an MOS transistor 104 is formed in thetransistor region 103.

Next, as shown in FIG. 19B, a first interlevel dielectric film 105 ofsilicon dioxide is deposited, and then the surface thereof isplanarized. Thereafter, a lower-electrode formation film of platinum isdeposited by a sputtering process on the planarized first interleveldielectric film 105. Subsequently, a ferroelectric film containingstrontium, bismuth, tantalum and the like is formed by a spin-on processon the lower-electrode formation film. After the ferroelectric film hasbeen crystallized, an upper-electrode formation film of platinum isdeposited by a sputtering process on the ferroelectric film. Thereafter,the upper-electrode formation film, the ferroelectric film and thelower-electrode formation film are dry-etched in this order, therebyforming a lower electrode 106, a capacitive insulating film 107 and anupper electrode 108 out of the lower-electrode formation film, theferroelectric film and the upper-electrode formation film, respectively,on part of the interlevel dielectric film 105 located over the isolationfilm 102. In this manner, a capacitor 109 made of the lower electrode106, the capacitive insulating film 107 and the upper electrode 108 isformed.

Then, as shown in FIG. 19C, a second interlevel dielectric film 110 ofsilicon dioxide is deposited over the entire surface of thesemiconductor substrate 101. Thereafter, a first contact hole 110 a forexposing the upper electrode 108 therein and a second contact hole 110 bfor exposing a doped region of the MOS transistor 104 therein are formedin the second interlevel dielectric film 110.

Then, as shown in FIG. 19D, a metal film containing aluminum as a maincomponent is deposited over the entire surface of the second interleveldielectric film 110 including the contact holes 110 a and 110 b. Themetal film is patterned, thereby forming a wiring 111 out of the metalfilm. Thereafter, another wiring layer and a passivation film, forexample, are formed.

In the known method for fabricating a semiconductor device, however, thecapacitor 109 is formed over the isolation film 102 adjacent to thetransistor region 103.

In addition, since the capacitor 109 extends along the principal surfaceof the semiconductor substrate 101, i.e., has a so-called planarstructure, the projected area of the capacitor 109 onto the substratesurface that is enough to ensure a required capacitance is large,resulting in the extremely small effect of reducing a wiring rule forthe MOS transistor 104 and the wiring 111.

Therefore, especially the semiconductor device including the capacitor109 in which a ferroelectric or a high-κ material is used for thecapacitive insulating film 107 has a problem that the area of eachcapacitor, specifically the area of each cell in a semiconductor memory,cannot be reduced.

SUMMARY OF THE INVENTION

It is therefore an object of the present invention to reduce the area ofeach capacitor in a semiconductor device including a capacitor.

In order to achieve this object, according to the present invention, anoxygen barrier film, a lower electrode and a capacitive insulating filmare stacked over a conductive plug, and in addition, the capacitiveinsulating film has a bent portion that extends along the direction ofpenetration of the conductive plug.

Specifically, a first inventive semiconductor device includes: aconductive plug formed through an insulating film; a conductive oxygenbarrier film formed on the insulating film so as to be electricallyconnected to the conductive plug and to cover the conductive plug; alower electrode formed on the oxygen barrier film and connected to theoxygen barrier film; a capacitive insulating film formed on the lowerelectrode, following the lower electrode; and an upper electrode formedon the capacitive insulating film, following the capacitive insulatingfilm. The capacitive insulating film has a bent portion that extendsalong the direction in which the conductive plug penetrates through theinsulating film.

In the first inventive semiconductor device, the capacitor made of thelower electrode, the capacitive insulating film and the upper electrodeis formed over a transistor with the conductive plug sandwichedtherebetween. Thus, the unit area of a cell constituted by the capacitorand the transistor is reduced. In addition, since the capacitiveinsulating film has the bent portion that extends along the direction ofpenetration of the conductive plug, the capacitive insulating film has aface substantially perpendicular to the substrate surface. Accordingly,the projected area of the capacitive insulating film onto the substratesurface is reduced, thus further reducing the cell area. Moreover, sincethe oxygen barrier film is interposed between the lower electrode andthe conductive plug, the conductive plug is not oxidized by oxygen atomsconstituting the capacitive insulating film.

A second inventive semiconductor device includes: a conductive plugformed through a first interlevel dielectric film formed on a substrate;a conductive oxygen barrier film formed on the first interleveldielectric film so as to be electrically connected to the conductiveplug and to cover the conductive plug; a second interlevel dielectricfilm formed on the first interlevel dielectric film and having anopening in which the oxygen barrier film is exposed; a lower electrodeformed to follow bottom and wall surfaces of the opening formed in thesecond interlevel dielectric film and to be connected to the oxygenbarrier film; a capacitive insulating film formed on the lowerelectrode, following the lower electrode; and an upper electrode formedon the capacitive insulating film, following the capacitive insulatingfilm. The capacitive insulating film has contiguous portions locatedover the bottom and wall surfaces of the opening, respectively, to forma U-bent portion that extends along the direction in which theconductive plug penetrates through the first interlevel dielectric film.

In the second inventive semiconductor device, the lower electrode isformed to follow the bottom and wall surfaces of the opening formed inthe second interlevel dielectric film. Thus, a U-bent portion extendingalong the direction of penetration of the conductive plug is formed incontiguous portions located over the wall and bottom surfaces of theopening. Accordingly, the capacitive insulating film has a facesubstantially perpendicular to the substrate surface. As a result, thesame effect as in the first inventive semiconductor device is obtained.

The second inventive semiconductor device may include an adhesion layerthat enhances the adhesion of the lower electrode to the secondinterlevel dielectric film and is interposed between the bottom surfaceof the opening and the lower electrode and between the wall surface ofthe opening and the lower electrode.

Alternatively, the second inventive semiconductor device may include anadhesion layer that enhances the adhesion of the lower electrode to thesecond interlevel dielectric film and is interposed between the wall ofthe opening and the lower electrode.

In such a case, the adhesion layer is preferably made of a metal oxide.

A third inventive semiconductor device includes: a conductive plugformed through an interlevel dielectric film formed on a substrate; aconductive oxygen barrier film formed on the interlevel dielectric filmso as to be electrically connected to the conductive plug and to coverthe conductive plug; a lower electrode having a relatively largethickness and formed on the oxygen barrier film so as to be connected tothe oxygen barrier film and to cover the oxygen barrier film; acapacitive insulating film formed on upper and side surfaces of thelower electrode; and an upper electrode formed on the capacitiveinsulating film, following the capacitive insulating film. Thecapacitive insulating film has contiguous portions located over theupper and side surfaces of the lower electrode, respectively, to form aninverted U-bent portion that extends along the direction in which theconductive plug penetrates through the interlevel dielectric film.

In the third inventive semiconductor device, the conductive plug, theoxygen barrier film and the lower electrode are stacked, and thecapacitive insulating film is formed on the tipper and side surfaces ofthe lower electrode having a relatively large thickness. Thus, aninverted U-bent portion extending along the direction of penetration ofthe conductive plug is formed in contiguous portions located over theupper and side surfaces of the lower electrode. Accordingly, thecapacitive insulating film has a face substantially perpendicular to thesubstrate surface. As a result, the same effect as in the firstinventive semiconductor device is obtained.

A fourth inventive semiconductor device includes: a conductive plugformed through an interlevel dielectric film formed on a substrate; aconductive oxygen barrier film formed on the interlevel dielectric filmso as to be electrically connected to the conductive plug and to coverthe conductive plug; an underlying film formed on the oxygen barrierfilm and having a relatively large thickness; a lower electrode formedon upper and side surfaces of the underlying film, an end portion of thelower electrode being connected to the oxygen barrier film; a capacitiveinsulating film formed on the lower electrode, following the lowerelectrode; and an upper electrode formed on the capacitive insulatingfilm, following the capacitive insulating film. The capacitiveinsulating film has contiguous portions located over the upper and sidesurfaces of the underlying film, respectively, to form an invertedU-bent portion that extends along the direction in which the conductiveplug penetrates through the interlevel dielectric film.

In the fourth inventive semiconductor device, the lower electrode isformed on the upper and side surfaces of the underlying film, and thecapacitive insulating film is formed to follow the lower electrode.Thus, an inverted U-bent portion extending along the direction ofpenetration of the conductive plug is formed in contiguous portionslocated over the upper and side surfaces of the underlying film.Accordingly, the capacitive insulating film has a face substantiallyperpendicular to the substrate surface. As a result, the same effect asin the first inventive semiconductor device is obtained.

The fourth inventive semiconductor device preferably includes anadhesion layer that enhances the adhesion of the lower electrode to theunderlying film and is interposed between the underlying film and thelower electrode.

In such a case, the adhesion layer is preferably made of a metal oxide.

A fifth inventive semiconductor device includes: a conductive plugformed through an interlevel dielectric film formed on a substrate; aconductive oxygen barrier film formed on the interlevel dielectric filmso as to be electrically connected to the conductive plug and to coverthe conductive plug; a lower electrode in the shape of a bottomedcylinder formed on the oxygen barrier film to be connected to the oxygenbarrier film; a capacitive insulating film formed on the lowerelectrode, following the bottom surface of, and sidewall inner and outersurfaces of, the lower electrode; and an upper electrode formed on thecapacitive insulating film, following the capacitive insulating film.The capacitive insulating film has at least contiguous portions locatedover the bottom of, and the sidewall inner wall surface of, the lowerelectrode, respectively, to form a U-bent portion that extends along thedirection in which the conductive plug penetrates through the interleveldielectric film.

In the fifth inventive semiconductor device, a U-bent portion extendingalong the direction of penetration of the conductive plug is formed incontiguous portions located over the bottom and sidewall inner surfaceof the lower electrode. Accordingly, the capacitive insulating film hasa face substantially perpendicular to the substrate surface. As aresult, the same effect as in the first inventive semiconductor deviceis obtained. In addition, the lower electrode has the shape of abottomed cylinder. Thus, the sidewall outer surface of the lowerelectrode increases the area in which the lower electrode faces theupper electrode, thereby increasing the capacitance significantly.

A sixth inventive semiconductor device includes: a conductive plugformed through an interlevel dielectric film formed on a substrate; aconductive oxygen barrier film formed on the interlevel dielectric filmso as to be electrically connected to the conductive plug and to coverthe conductive plug; a shape-sustaining film in the shape of a bottomedcylinder formed on the oxygen barrier film; a lower electrode formed onthe shape-sustaining film, following the bottom surface of, and sidewallinner and outer surfaces of, the shape-sustaining film, an end portionof the lower electrode being connected to the oxygen barrier film; acapacitive insulating film formed on the lower electrode, following thelower electrode; and an upper electrode formed on the capacitiveinsulating film, following the capacitive insulating film. Thecapacitive insulating film has at least contiguous portions located overthe bottom and sidewall inner surfaces of the shape-sustaining film,respectively, to form a U-bent portion that extends along the directionin which the conductive plug penetrates through the interleveldielectric film.

In the sixth inventive semiconductor device, the lower electrode isformed on the shape-sustaining film in the shape of a bottomed cylinderformed on the oxygen barrier film, so that the lower electrode followsthe bottom surface and the sidewall inner and outer surfaces of theshape-sustaining film. In addition, the capacitive insulating film isformed to follow the lower electrode. Thus, a U-bent portion extendingalong the direction of penetration of the conductive plug is formed atleast in contiguous portions located over the bottom and sidewall innersurfaces of the shape-sustaining film. Accordingly, the capacitiveinsulating film has a face substantially perpendicular to the substratesurface. As a result, the same effect as in the first inventivesemiconductor device is obtained. In addition, the shape-sustaining filmhaving the shape of a bottomed cylinder is used. Thus, the capacitanceincreases, while the shape of the lower electrode is stabilized.

In such a case, the shape-sustaining film is preferably made of a metaloxide.

In the first through sixth inventive semiconductor devices, thecapacitive insulating film is preferably made of a ferroelectric or ahigh-dielectric-constant material.

A first inventive method for fabricating a semiconductor device includesthe steps of: a) forming a first interlevel dielectric film on asemiconductor region; b) forming, in the first interlevel dielectricfilm, a conductive plug connected to the semiconductor region; c)forming a conductive oxygen barrier film on the first interleveldielectric film such that the conductive oxygen barrier film covers theconductive plug; d) forming, on the first interlevel dielectric film, asecond interlevel dielectric film having an opening in which the oxygenbarrier film is exposed; e) forming a lower electrode on bottom and wallsurfaces of the opening formed in the second interlevel dielectric filmsuch that the lower electrode is connected to the oxygen barrier film;f) forming a capacitive insulating film on the lower electrode such thatthe capacitive insulating film follows the lower electrode; and g)forming an upper electrode on the capacitive insulating film such thatthe upper electrode follows the capacitive insulating film.

In the first inventive method, a capacitive insulating film has a facesubstantially perpendicular to the substrate surface over the wallsurface of an opening formed in a second interlevel dielectric film.Thus, it is possible to reduce the projected area of a capacitor ontothe substrate surface, while ensuring a required capacitance. Inaddition, a lower electrode is formed on the bottom and wall surfaces ofthe opening in the second interlevel dielectric film. Thus, thethickness of the lower electrode can be easily reduced, thus ensuring alarge surface area of the lower electrode. Furthermore, since an oxygenbarrier film is formed independently of the lower electrode, the oxygenbarrier film can be made relatively thick. Thus, even if the capacitiveinsulating film is made of a ferroelectric or a high-dielectric-constantmaterial, the conductive plug is hot oxidized during crystallization ofthe ferroelectric or the like through heat treatment.

In the first inventive method, the step e) preferably includes the stepof removing part of the lower electrode located on the second interleveldielectric film by, for example, a CMP process or a resist etch backprocess.

The first inventive method may include the steps of forming, on parts ofthe second interlevel dielectric film respectively located on the bottomand wall surfaces of the opening, an adhesion layer that is connected tothe oxygen barrier film and enhances the adhesion of the lower electrodeto the second interlevel dielectric film, between the steps of d) ande).

Alternatively, the first inventive method may include the step offorming, on part of the second interlevel dielectric film located on thewall of the opening, an adhesion layer that enhances the adhesion of thelower electrode to the second interlevel dielectric film, between thesteps of d) and e).

In such a case, the adhesion layer is preferably made of a metal oxide.

A second inventive method for fabricating a semiconductor deviceincludes the steps of: a) forming a first interlevel dielectric film ona semiconductor region; b) forming, in the first interlevel dielectricfilm, a conductive plug connected to the semiconductor region; c)forming, on the first interlevel dielectric film, a second interleveldielectric film having a first opening in which the conductive plug isexposed; d) forming a conductive oxygen barrier film in the firstopening such that the conductive oxygen barrier film fills in the firstopening; e) forming, on the second interlevel dielectric film, a thirdinterlevel dielectric film having a second opening in which the oxygenbarrier film is exposed; f) forming a lower electrode on bottom and wallsurfaces of the second opening formed in the third interlevel dielectricfilm such that the lower electrode is connected to the oxygen barrierfilm; g) forming a capacitive insulating film on the lower electrodesuch that the capacitive insulating film follows the lower electrode;and h) forming an upper electrode on the capacitive insulating film suchthat the upper electrode follows the capacitive insulating film.

In the second inventive method, the same effect as in the firstinventive method is obtained. In addition, an oxygen barrier film isformed to fill in a first opening formed in a second interleveldielectric film. Thus, even if the oxygen barrier film is made of adifficult-to-etch material, the oxygen barrier film is formed easily. Inaddition, the oxygen barrier film is easily made thick, thus ensuring anenhanced barrier property.

In the second inventive method, the step f) preferably includes the stepof removing part of the lower electrode located on the third interleveldielectric film.

The second inventive method may include the step of forming, on parts ofthe third interlevel dielectric film respectively located on the bottomand wall surfaces of the second opening, an adhesion layer that isconnected to the oxygen barrier film and enhances the adhesion of thelower electrode to the third interlevel dielectric film, between thesteps of e) and f).

Alternatively, the second inventive method may include the step offorming, on part of the third interlevel dielectric film located on thewall of the second opening, an adhesion layer that enhances the adhesionof the lower electrode to the third interlevel dielectric film, betweenthe steps of e) and f).

In such a case, the adhesion layer is preferably made of a metal oxide.

A third inventive method for fabricating a semiconductor device includesthe steps of: a) forming a first interlevel dielectric film on asemiconductor region; b) forming, in the first interlevel dielectricfilm, a conductive plug connected to the semiconductor region; c)forming a conductive oxygen barrier film on the first interleveldielectric film such that the conductive oxygen barrier film covers theconductive plug; d) forming a second interlevel dielectric film on thefirst interlevel dielectric film such that the oxygen barrier film isexposed from the second interlevel dielectric film; e) forming, on theexposed oxygen barrier film, a lower electrode having a relatively largethickness; f) forming a capacitive insulating film on upper and sidesurfaces of the lower electrode; and g) forming an upper electrode onthe capacitive insulating film such that the upper electrode follows thecapacitive insulating film.

In the third method, the capacitive insulating film has a facesubstantially perpendicular to the substrate surface over the wallsurface of the lower electrode. Thus, it is possible to reduce theprojected area of the capacitor onto the substrate surface, whileensuring a required capacitance. In addition, a lower electrode having arelatively large thickness is formed after the formation of an oxygenbarrier film. Thus, processing can be easily performed, as compared tothe case where the lower electrode and the oxygen barrier film areformed simultaneously. Further, a second interlevel dielectric is formedsuch that the oxygen barrier film is exposed from the second interleveldielectric film. Thus, the second interlevel dielectric film is presentaround the lower electrode. Therefore, even if the lower electrode islarger than the oxygen barrier film, the lower electrode can be formedto overlap with the second interlevel dielectric film. As a result, thealignment between the oxygen barrier film and the lower electrode isperformed easily.

A fourth inventive method for fabricating a semiconductor deviceincludes the steps of: a) forming a first interlevel dielectric film ona semiconductor region; b) forming, in the first interlevel dielectricfilm, a conductive plug connected to the semiconductor region; c)forming a conductive oxygen barrier film on the first interleveldielectric film such that the conductive oxygen barrier film covers theconductive plug; d) forming a second interlevel dielectric film on thefirst interlevel dielectric film such that the oxygen barrier film isexposed from the second interlevel dielectric film; e) forming, on theexposed oxygen barrier film, an underlying film having a relativelylarge thickness; f) forming a lower electrode on upper and side surfacesof the underlying film such that an end portion of the lower electrodeis connected to the oxygen barrier film; g) forming a capacitiveinsulating film on the lower electrode such that the capacitiveinsulating film follows the lower electrode; and h) forming an upperelectrode on the capacitive insulating film such that the upperelectrode follows the capacitive insulating film.

In the fourth inventive method, the same effect as in the thirdinventive method is obtained. In addition, since a thick member is usedas an underlying film for a lower film instead of increasing thethickness of the lower electrode itself, it is possible to select amaterial exhibiting processability better than the lower electrode, andthus the yield is enhanced.

The fourth inventive method preferably includes the step of forming, onthe surface of the underlying film, an adhesion layer that enhances theadhesion of the lower electrode to the underlying film, between thesteps of e) and f).

A fifth inventive method for fabricating a semiconductor device includesthe steps of: a) forming a first interlevel dielectric film on asemiconductor region; b) forming, in the first interlevel dielectricfilm, a conductive plug connected to the semiconductor region; c)forming a conductive oxygen barrier film on the first interleveldielectric film such that the conductive oxygen barrier film covers theconductive plug; d) forming a second interlevel dielectric film over theentire surface of the first interlevel dielectric film including theoxygen barrier film and then forming, in the second interleveldielectric film, an opening in which the oxygen barrier film is exposed;e) depositing a conductive film on bottom and wall surfaces of theopening formed in the second interlevel dielectric film, therebyforming, on the oxygen barrier film, a lower electrode in the shape of abottomed cylinder made of the conductive film and connected to theoxygen barrier film; f) removing part of the second interleveldielectric film to expose the lower electrode and then forming acapacitive insulating film such that the capacitive insulating filmfollows sidewall inner and outer surfaces of the exposed lowerelectrode; and g) forming an upper electrode on the capacitiveinsulating film so that the upper electrode follows the capacitiveinsulating film.

In the fifth inventive method, the capacitive insulating film has a facesubstantially perpendicular to the substrate surface on the sidewallinner and outer surfaces of the lower electrode. Thus, it is possible toreduce the projected area of the capacitor onto the substrate surface,while increasing the capacitance significantly.

A sixth inventive method for fabricating a semiconductor device includesthe steps of: a) forming a first interlevel dielectric film on asemiconductor region; b) forming, in the first interlevel dielectricfilm, a conductive plug connected to the semiconductor region; c)forming a conductive oxygen barrier film on the first interleveldielectric film such that the conductive oxygen barrier film covers theconductive plug; d) forming a second interlevel dielectric film over theentire surface of the first interlevel dielectric film including theoxygen barrier film and then forming, in the second interleveldielectric film, an opening in which the oxygen barrier film is exposed;e) forming a shape-sustaining film in the shape of a bottomed cylinderon bottom and wall surfaces of the opening formed in the secondinterlevel dielectric film; f) removing part of the second interleveldielectric film to expose a sidewall outer surface of theshape-sustaining film, and then forming a lower electrode such that thelower electrode follows the sidewall outer surface of, and a sidewallinner surface of, the exposed shape-sustaining film and that an endportion of the lower electrode is connected to the oxygen barrier film;g) forming a capacitive insulating film on the lower electrode such thatthe capacitive insulating film follows the lower electrode; and h)forming an upper electrode on the capacitive insulating film such thatthe upper electrode follows the capacitive insulating film.

In the sixth inventive method, the same effect as in the fifth inventivemethod is obtained. In addition, a shape-sustaining film made of amaterial different from that used for the lower electrode is used as abottomed-cylindrical member instead of using the lower electrode as thebottomed-cylindrical member. Thus, it is possible to prevent thebottomed-cylindrical member from being deformed.

In the sixth inventive method, the shape-sustaining film is preferablymade of a metal oxide.

In the first through sixth inventive methods, the capacitive insulatingfilm is preferably made of a ferroelectric or a high-dielectric-constantmaterial.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view showing a structure of a semiconductordevice according to a first embodiment of the present invention.

FIGS. 2A through 2D are cross-sectional views showing respective processsteps in a first method for fabricating the semiconductor device of thefirst embodiment.

FIGS. 3A through 3D are cross-sectional views showing respective processsteps in a second method for fabricating the semiconductor device of thefirst embodiment.

FIGS. 4A through 4D are cross-sectional views showing respective processsteps in a variation of the first method for fabricating thesemiconductor device of the first embodiment.

FIG. 5 is a cross-sectional view showing a structure of a semiconductordevice according to a second embodiment of the present invention.

FIGS. 6A through 6D are cross-sectional views showing respective processsteps in a method for fabricating the semiconductor device of the secondembodiment.

FIG. 7 is a cross-sectional view showing a structure of a semiconductordevice according to a variation of the second embodiment.

FIGS. 8A through 8D are cross-sectional views showing respective processsteps in a method for fabricating the semiconductor device of thevariation of the second embodiment.

FIG. 9 is a cross-sectional view showing a structure of a semiconductordevice according to a third embodiment of the present invention.

FIGS. 10A through 10D are cross-sectional views showing respectiveprocess steps in a method for fabricating the semiconductor device ofthe third embodiment.

FIG. 11 is a cross-sectional view showing a structure of a semiconductordevice according to a fourth embodiment of the present invention.

FIGS. 12A through 12D are cross-sectional views showing respectiveprocess steps in a method for fabricating the semiconductor device ofthe fourth embodiment.

FIG. 13 is a cross-sectional view showing a structure of a semiconductordevice according to a variation of the fourth embodiment.

FIGS. 14A through 14D are cross-sectional views showing respectiveprocess steps in a method for fabricating the semiconductor device ofthe variation of the fourth embodiment.

FIG. 15 is a cross-sectional view showing a structure of a semiconductordevice according to a fifth embodiment of the present invention.

FIGS. 16A through 16D are cross-sectional views showing respectiveprocess steps in a method for fabricating the semiconductor device ofthe fifth embodiment.

FIG. 17 is a cross-sectional view showing a structure of a semiconductordevice according to a sixth embodiment of the present invention.

FIGS. 18A through 18D are cross-sectional views showing respectiveprocess steps in a method for fabricating the semiconductor device ofthe sixth embodiment.

FIGS. 19A through 19D are cross-sectional views showing respectiveprocess steps in a method for fabricating a known semiconductor device.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Embodiment 1

A first embodiment of the present invention will be described withreference to the drawings.

FIG. 1 shows a cross-sectional structure of a semiconductor deviceaccording to the first embodiment of the present invention.

As shown in FIG. 1, an MOS transistor 30 is formed in a transistorregion defined by a shallow trench isolation (STI) film 11 in asemiconductor substrate 10 of, for example, silicon (Si). In FIG. 1,only one transistor region is shown, but the semiconductor substrate 10includes a plurality of transistor regions. This is also applicable tothe other embodiments below.

A first interlevel dielectric film 12 of silicon dioxide (SiO₂) with athickness of about 500 nm is formed on the semiconductor substrate 10including the MOS transistor 30.

A conductive plug 13 of tungsten (W) including, in a lower part thereof,a barrier layer (not shown) as a stack of titanium with a thickness ofabout 10 nm and titanium nitride (TiN) with a thickness of about 20 nmis formed in the interlevel dielectric film 12 to be connected to adoped source region 30 a of the MOS transistor 30.

A conductive oxygen barrier film 14 is formed on the conductive plug 13to be electrically connected to the conductive plug 13 and to cover theconductive plug 13. The oxygen barrier film 14 is made of titaniumaluminum nitride (TiAlN) with a thickness of about 50 nm, iridium (Ir)with a thickness of about 50 nm and iridium dioxide (IrO₂) with athickness of about 50 nm, which are stacked upwardly in this order.

A second interlevel dielectric film 15 of silicon dioxide having athickness of about 500 nm and including an opening 15 a for exposing theoxygen barrier film 14 therein is formed on the first interleveldielectric film 12.

A lower electrode 16 of platinum (Pt) with a thickness of about 50 nm isformed on the wall surface of the opening 15 a and on a part of theoxygen barrier film 14 exposed from the bottom surface of the opening 15a.

A capacitive insulating film 17 having a thickness of about 50 nm andmade of a ferroelectric that is a bismuth-layered perovskite oxidecontaining strontium (Sr), bismuth (Bi), tantalum (Ta) and niobium (Nb)is formed on the lower electrode 16, following the lower electrode 16.An upper electrode 18 of platinum (Pt) with a thickness of about 50 nmis formed on the capacitive insulating film 17, following the capacitiveinsulating film 17.

In this manner, a capacitor 19 in the first embodiment is made of thelower electrode 16, the capacitive insulating film 17 and the upperelectrode 18 and is provided above the conductive plug 13 formed on thedoped source region 30 a of the MOS transistor 30. Therefore, the unitarea of the cell including the capacitor and the transistor can bereduced.

In addition, the capacitive insulating film 17 is formed to follow thebottom and wall surfaces of the opening 15 a which has been formed inthe second interlevel dielectric film 15 and in which the oxygen barrierfilm 14 is exposed. Thus, the capacitive insulating film 17 has a U-bentportion 17 a that extends along the direction in which the conductiveplug 13 penetrates through the first interlevel dielectric film 12. Thebent portion 17 a means that the capacitive insulating film 17 has aface substantially perpendicular to the substrate surface, thus furtherreducing the projected area of the capacitive insulating film 17 ontothe substrate surface, i.e., the unit area of the cell, while ensuring arequired capacitance.

Instead of silicon dioxide, the first and second interlevel dielectricfilms 12 and 15 may be made of any insulating material such as fluorine(F)-doped silicon oxide (FSG) having a dielectric constant smaller thanthat of silicon dioxide.

The conductive plug 13 is not limited to tungsten, and may be made ofany conductive material such as polycrystalline silicon.

The lower and upper electrodes 16 and 18 are not limited to platinum,and may be made of any material that maintains its conductivity in anoxygen atmosphere at high temperatures.

The capacitive insulating film 17 is preferably made of a metal oxide ofa ferroelectric or a metal oxide of a high-κ material.

Fabrication Method 1 for Embodiment 1

Hereinafter, a first method for fabricating the semiconductor devicethus configured will be described with reference to the drawings.

FIGS. 2A though 2D show cross-sectional structures in respective processsteps of the first method for fabricating the semiconductor device ofthe first embodiment.

First, as shown in FIG. 2A, an STI film 11 is selectively formed in anupper part of the principal surface of a semiconductor substrate 10 todivide the principal surface into a plurality of transistor regions.Thereafter, an MOS transistor 30 is formed in each of the transistorregions. Then, a first interlevel dielectric film 12 of silicon dioxideis deposited by a chemical vapor deposition (CVD) process to a thicknessof about 1000 nm over the entire surface of the semiconductor substrate10 including the MOS transistor 30. Subsequently, the surface of thefirst interlevel dielectric film 12 is planarized by a chemicalmechanical polishing (CMP) process so that the thickness thereof isabout 500 nm. Then, through a lithography process and a dry etchingprocess, a contact hole is selectively formed in part of the firstinterlevel dielectric film 12 located over a source region 30 a of theMOS transistor 30. Subsequently, titanium and titanium nitride aredeposited by a sputtering or CVD process to thicknesses of about 10 nmand about 20 nm, respectively, over the first interlevel dielectric film12 including the contact hole, thereby forming a barrier layer (notshown). Then, a metal film of tungsten is deposited by a CVD process toa thickness of about 500 nm on the barrier layer to fill in the contacthole. Thereafter, respective parts of the barrier layer and the metalfilm located over the first interlevel dielectric film 12 are removed bya CMP process, thereby forming a conductive plug 13 out of the barrierlayer and the metal film in the contact hole.

Next, as shown in FIG. 2B, titanium aluminum nitride, iridium andiridium dioxide are deposited in this order by a sputtering process eachto a thickness of about 50 nm over the first interlevel dielectric film12 including the conductive plug 13, thereby forming an oxygen-barrierformation film. Subsequently, the oxygen-barrier formation film ispatterned by a lithography process and a dry etching process in a regionincluding the conductive plug 13, thereby forming an oxygen barrier film14 out of the oxygen-barrier formation film.

The, as shown in FIG. 2C, a second interlevel dielectric film 15 ofsilicon dioxide is deposited by a CVD process to a thickness of about1000 nm over the entire surface of the first interlevel dielectric film12 including the oxygen barrier film 14. Thereafter, the surface of thesecond interlevel dielectric film 15 is planarized by a CMP process sothat the thickness thereof is about 500 nm. Subsequently, an opening 15a for exposing the oxygen barrier film 14 therein is formed in thesecond interlevel dielectric film 15 by a lithography process and a dryetching process. Then, a lower-electrode formation film of platinum isdeposited by a sputtering or CVD process to a thickness of about 50 nmover the second interlevel dielectric film 15 including the opening 152.Thereafter, the lower-electrode formation film is patterned by alithography process and a dry etching process such that thelower-electrode formation film remains at least on the bottom and wallsurfaces of the opening 15 a, thereby forming a lower electrode 16 outof the lower-electrode formation film.

Then, as shown in FIG. 2D, a capacitive-insulating-film formation filmof a ferroelectric containing strontium, bismuth, tantalum and niobiumis deposited by a CVD process to a thickness of about 50 nm over thesecond interlevel dielectric film 15 as well as the lower electrode 16.Subsequently, an upper-electrode formation film of platinum is depositedby a sputtering or CVD process to a thickness of about 50 nm over thecapacitive-insulating-film formation film. Thereafter, thecapacitive-insulating-film formation film and the upper-electrodeformation film are patterned by a lithography process and a dry-etchingprocess in a region including the lower electrode 16, thereby forming acapacitive insulating film 17 and an upper electrode 18 out of thecapacitive-insulating-film formation film and the upper-electrodeformation film, respectively. Subsequently, annealing is performed at atemperature of about 700° C. for about 10 minutes so as to crystallizethe ferroelectric constituting the capacitive insulating film 17.

Thereafter, though not shown, a required wiring, for example, is formedover the semiconductor substrate 10, and then a passivation film isformed.

As described above, in the first fabrication method for the firstembodiment, the oxygen barrier film 14 is interposed between the lowerelectrode 16 and the conductive plug 13. Thus, the conductive plug 13 isnot oxidized by oxygen atoms constituting the capacitive insulating film17 during the annealing for crystallizing the capacitive insulating film17.

In addition, the oxygen barrier film 14 and the lower electrode 16 areformed in different process steps. Therefore, if the oxygen barrier film14 is made relatively thick, the barrier property of the oxygen barrierfilm 14 can be improved. On the other hand, the lower electrode 16 ismade relatively thin, the capacitive insulating film 17 has a facesubstantially perpendicular to the substrate surface, thus ensuring alarger surface area of the capacitive insulating film 17.

Accordingly, it is possible to avoid the problem that a refractory metalsuch as platinum is generally resistant to etching when the lowerelectrode 16 is relatively thick, for example. It is also possible toprevent the problem that the opening 15 a, formed in the secondinterlevel dielectric film 15 to apply a three-dimensional structure tothe bent portion 17 a of the capacitive insulating film 17, becomessmall in diameter to reduce the effective area of the capacitiveinsulating film 17.

Fabrication Method 2 for Embodiment 1

Hereinafter, a second method for fabricating the semiconductor device ofthe first embodiment will be described with reference to the drawings.

FIGS. 3A though 3D show cross-sectional structures in respective processsteps of the second method for fabricating the semiconductor device ofthe first embodiment. In FIGS. 3A though 3D, each component also shownin FIGS. 2A though 2D is identified by the same reference numeral.

First, as shown in FIG. 3A, as in the first fabrication method, a firstinterlevel dielectric film 12 of silicon dioxide is deposited to athickness of about 1000 nm over the entire surface of a semiconductorsubstrate 10 including an MOS transistor 30. Subsequently, the surfaceof the first interlevel dielectric film 12 is planarized by a CMPprocess so that the thickness thereof is about 500 nm. Then, a contacthole is selectively formed in part of the first interlevel dielectricfilm 12 located over a source region 30 a of the MOS transistor 30.Subsequently, a conductive plug 13 made of a barrier film and tungstenis formed in the contact hole. Thereafter, a second interleveldielectric film 20 of silicon dioxide is deposited by a CVD process to athickness of about 150 nm. Then, through a lithography process and a dryetching process, a first opening 20 a is formed in the second interleveldielectric film 20 so that the conductive plug 13 is exposed therein.

Next, as shown in FIG. 3B, titanium aluminum nitride, iridium andiridium dioxide are deposited in this order by a sputtering process eachto a thickness of about 50 nm over the entire surface of the firstinterlevel dielectric film 12 including the first opening 20 a, therebyforming an oxygen-barrier formation film. Subsequently, part of theoxygen-barrier formation film located over the second interleveldielectric film 20 is removed by a CMP process, thereby forming anoxygen barrier film 14 in the first opening 20 a of the secondinterlevel dielectric film 20.

The, as shown in FIG. 3C, a third interlevel dielectric film 21 ofsilicon dioxide is deposited by a CVD process to a thickness of about500 nm over the entire surface of the second interlevel dielectric film20 including the oxygen barrier film 14. Subsequently, a second opening21 a for exposing the oxygen barrier film 14 therein is formed by alithography process and a dry etching process in the third interleveldielectric film 21. Then, a lower-electrode formation film of platinumis deposited by a sputtering or CVD process to a thickness of about 50nm over the third interlevel dielectric film 21 including the secondopening 21 a. Thereafter, the lower-electrode formation film ispatterned by a lithography process and a dry etching process such thatthe lower-electrode formation film remains at least on the bottom andwall surfaces of the second opening 21 a, thereby forming a lowerelectrode 16 out of the lower-electrode formation film.

Then, as shown in FIG. 3D, a capacitive insulating film 17 of aferroelectric containing strontium, bismuth, tantalum and niobium with athickness of about 50 nm is formed by a CVD process over the thirdinterlevel dielectric film 21 as well as the lower electrode 16.Subsequently, an upper electrode 18 of platinum with a thickness ofabout 50 nm is formed on the capacitive insulating film 17 by asputtering or CVD process. In this case, the capacitive insulating film17 and the upper electrode 18 are patterned using the same mask. In thismanner, a capacitor 19, made of the lower electrode 16, the capacitiveinsulating film 17 and the upper electrode 18 is formed. In this method,annealing is also performed at a temperature of about 700° C. for about10 minutes so as to crystallize the ferroelectric constituting thecapacitive insulating film 17.

Thereafter, though not shown, a required wiring, for example, is formedover the semiconductor substrate 10, and then a passivation film isformed.

As described above, in the second fabrication method for the firstembodiment, the oxygen barrier film 14 is formed to fill in the firstopening 20 a of the second interlevel dielectric film 20 that determinesthe thickness of the oxygen barrier film 14. Thus, even if the oxygenbarrier film 14 is made of a difficult-to-etch material, fine patterningof the oxygen barrier film 14 is easily attained. In addition, thethickness of the oxygen barrier film 14 is easily increased in order toobtain a higher barrier property.

Variation of Fabrication Method 1

Hereinafter, a variation of the first method for fabricating thesemiconductor device of the first embodiment will be described withreference to the drawings.

FIGS. 4A though 4D show cross-sectional structures in respective processsteps of the variation of the first method for fabricating thesemiconductor device of the first embodiment. In FIGS. 4A though 4D,each component also shown in FIGS. 2A though 2D is identified by thesame reference numeral.

First, as shown in FIG. 4A, as in the first fabrication method, a firstinterlevel dielectric film 12 of silicon dioxide is deposited to athickness of about 1000 nm over the entire surface of a semiconductorsubstrate 10 including an MOS transistor 30. Subsequently, the surfaceof the first interlevel dielectric film 12 is planarized by a CMPprocess so that the thickness thereof is about 500 nm. Then, a contacthole is selectively formed in part of the first interlevel dielectricfilm 12 located over a source region 30 a of the MOS transistor 30.Subsequently, a conductive plug 13 made of a barrier layer and tungstenis formed in the contact hole.

Next, as shown in FIG. 4B, titanium aluminum nitride, iridium andiridium dioxide are deposited in this order by a sputtering process eachto a thickness of about 50 nm over the first interlevel dielectric film12 including the conductive plug 13, thereby forming an oxygen-barrierformation film. Subsequently, the oxygen-barrier formation film ispatterned by a lithography process and a dry etching process in a regionincluding the conductive plug 13, thereby forming the oxygen barrierfilm 14 out of an oxygen-barrier formation film.

The, as shown in FIG. 4C, a second interlevel dielectric film 15 ofsilicon dioxide is deposited by a CVD process to a thickness of about1000 nm over the entire surface of the first interlevel dielectric film12 as well as the oxygen barrier film 14. Subsequently, the surface ofthe second interlevel dielectric film 15 is planarized by a CMP processsuch that the thickness thereof is about 500 nm. Thereafter, an opening15 a for exposing the oxygen barrier film 14 therein is formed in thesecond interlevel dielectric film 15 by a lithography process and a dryetching process. Then, a lower-electrode formation film of platinum isdeposited by a sputtering or CVD process to a thickness of about 50 nmon the bottom and wall surfaces of the opening 15 a so as to beconnected to the oxygen barrier film 14. Thereafter, part of thelower-electrode formation film located over the second interleveldielectric film 15 is removed by a CMP process or a resist etch backprocess so that the lower-electrode formation film remains on the bottomand wall surfaces of the opening 15 a, thereby forming a lower electrode16A out of the lower-electrode formation film.

Then, as shown in FIG. 4D, a capacitive insulating film 17 having athickness of about 50 nm and made of a ferroelectric containingstrontium, bismuth, tantalum and niobium is deposited by a CVD processon the second interlevel dielectric film 15 including the lowerelectrode 16A. Subsequently, an upper electrode 18 of platinum with athickness of about 50 nm is formed by a sputtering or CVD process on thecapacitive insulating film 17. In this manner, a capacitor 19 made ofthe lower electrode 16A, the capacitive insulating film 17 and the upperelectrode 18 is formed. In this variation, annealing is also performedat a temperature of about 700° C. for about 10 minutes so as tocrystallize the ferroelectric constituting the capacitive insulatingfilm 17.

Thereafter, though not shown, a required wiring, for example, is formedover the semiconductor substrate 10, and then a passivation film isformed.

As described above, in the variation of the first fabrication method, inthe process step of forming the lower electrode 16A shown in FIG. 4C,the lower electrode 16A is formed through the CMP process or the resistetch back process so that no alignment margin is required between theopening 15 a of the second interlevel dielectric film 15 and the lowerelectrode 16A. Accordingly, the area of each cell can be furtherreduced.

In this variation, the second fabrication method, i.e., the method offorming the oxygen barrier film 14 such that an opening in an interleveldielectric film is filled therewith, may also be used for the formationof the oxygen barrier film 14.

Embodiment 2

Hereinafter, a second embodiment of the present invention will bedescribed with reference to the drawings.

FIG. 5 shows a cross-sectional structure of a semiconductor deviceaccording to the second embodiment of the present invention. In FIG. 5,each component also shown in FIG. 1 is identified by the same referencenumeral and the description thereof will be omitted herein.

As shown in FIG. 5, in the semiconductor device of the secondembodiment, a conductive adhesion layer 22 of iridium oxide with athickness of about 5 nm is provided on the bottom and wall surfaces ofan opening 15 a formed in a second interlevel dielectric film 15.

The adhesion layer 22 improves the adhesion between the secondinterlevel dielectric film 15 of silicon dioxide and a lower electrode16 of platinum. Thus, the lower electrode 16 does not easily peel offfrom the second interlevel dielectric film 15.

Hereinafter, a method for fabricating the semiconductor device thusconfigured will be described with reference to the drawings.

FIGS. 6A though 6D show cross-sectional structures in respective processsteps of the method for fabricating the semiconductor device of thesecond embodiment. In FIGS. 6A though 6D, each component also shown inFIGS. 2A though 2D is identified by the same reference numeral.

First, as shown in FIG. 6A, as in the first fabrication method for thefirst embodiment, a first interlevel dielectric film 12 of silicondioxide is deposited to a thickness of about 1000 nm over the entiresurface of a semiconductor substrate 10 including an MOS transistor 30.Subsequently, the surface of the first interlevel dielectric film 12 isplanarized by a CMP process so that the thickness thereof is about 500nm. Then, a contact hole is selectively formed in part of the firstinterlevel dielectric film 12 located over a source region 30 a of theMOS transistor 30. Subsequently, a conductive plug 13 made of a barrierlayer and tungsten is formed in the contact hole.

Next, as shown in FIG. 6B, titanium aluminum nitride, iridium andiridium dioxide are deposited in this order by a sputtering process eachto a thickness of about 50 nm over the first interlevel dielectric film12 including the conductive plug 13, thereby forming an oxygen-barrierformation film. Subsequently, the oxygen-barrier formation film ispatterned by a lithography process and a dry etching process in a regionincluding the conductive plug 13, thereby forming an oxygen barrier film14 out of the oxygen-barrier formation film.

The, as shown in FIG. 6C, a second interlevel dielectric film 15 ofsilicon dioxide is deposited by a CVD process to a thickness of about1000 nm over the entire surface of the first interlevel dielectric film12 as well as the oxygen barrier film 14. Thereafter, the surface of thesecond interlevel dielectric film 15 is planarized by a CMP process sothat the thickness thereof is about 500 nm. Subsequently, an opening 15a for exposing the oxygen barrier film 14 therein is formed in thesecond interlevel dielectric film 15 by a lithography process and a dryetching process. Then, an adhesion layer 22 of iridium oxide and alower-electrode formation film of platinum are sequentially deposited bya sputtering or CVD process to thicknesses of about 5 nm and about 50nm, respectively, over the second interlevel dielectric film 15including the opening 15 a. Thereafter, the adhesion layer 22 and thelower-electrode formation film are patterned by a lithography processand a dry etching process such that the adhesion layer 22 and thelower-electrode formation film remain at least on the bottom and wallsurfaces of the opening 15 a, thereby forming a lower electrode 16 withthe adhesion layer 22 interposed between the second interleveldielectric film 15 and the lower electrode 16.

Then, as shown in FIG. 6D, a capacitive insulating film 17 having athickness of about 50 nm and made of a ferroelectric containingstrontium, bismuth, tantalum and niobium is formed by a CVD process overthe second interlevel dielectric film 15 as well as the lower electrode16. Subsequently, an upper electrode 18 of platinum with a thickness ofabout 50 nm is formed through a sputtering or CVD process on thecapacitive insulating film 17. In this case, the capacitive insulatingfilm 17 and the upper electrode 18 are patterned using the same mask. Inthis manner, a capacitor 19 made of the lower electrode 16, thecapacitive insulating film 17 and the upper electrode 18 is formed. Inthis embodiment, annealing is also performed at a temperature of about700° C. for about 10 minutes so as to crystallize the ferroelectricconstituting the capacitive insulating film 17.

Thereafter, though not shown, a required wiring, for example, is formedover the semiconductor substrate 10, and then a passivation film isformed.

As described above, in the second embodiment, the adhesion layer 22 ofiridium oxide with a thickness of about 5 nm is provided on the bottomand wall surfaces of the opening 15 a of the second interleveldielectric film 15. Thus, it is possible to prevent the lower electrode16 from peeling off from the second interlevel dielectric film 15 duringthe annealing for crystallizing the ferroelectric constituting thecapacitive insulating film 17.

In the second embodiment, the second fabrication method for the firstembodiment, i.e., the method of forming the oxygen barrier film 14 suchthat an opening formed in an interlevel dielectric film is filledtherewith, may also be used for the formation of the oxygen barrier film14.

In the process step shown in FIG. 6C, the formation of the adhesionlayer 22 and the lower electrode 16 may be performed through a CMPprocess, for example, as shown in FIG. 4C, instead of a patterningprocess using lithography and etching.

Variation of Embodiment 2

Hereinafter, a variation of the second embodiment of the presentinvention will be described with reference to the drawings.

FIG. 7 shows a cross-sectional structure of a semiconductor deviceaccording to the variation of the second embodiment of the presentinvention. In FIG. 7, each component also shown in FIG. 5 is identifiedby the same reference numeral and the description thereof will beomitted herein.

The semiconductor device of this variation is characterized in that aninsulating adhesion layer 23 of titanium dioxide (TiO₂) with a thicknessof about 10 nm is provided on the wall surface of an opening 15 a formedin a second interlevel dielectric film 15.

The adhesion layer 23 improves the adhesion between the secondinterlevel dielectric film 15 of silicon dioxide and a lower electrode16 of platinum. Thus, the lower electrode 16 does not easily peel offfrom the second interlevel dielectric film 15. In addition, since theadhesion layer 23 is selectively formed only on the wall surface of theopening 15 a, an oxygen barrier film 14 is in direct contact with thelower electrode 16. Accordingly, unlike the second embodiment, amaterial that is not conductive may be used for the adhesion layer 23 inthis variation. As a result, the range of choice of a material for theadhesion layer 23 is extended to materials such as materials having highadhesion properties and inexpensive materials.

The adhesion layer 23 may be made of any material exhibiting excellentadhesion between the second interlevel dielectric film 15 and the lowerelectrode 16.

Hereinafter, a method for fabricating the semiconductor device thusconfigured will be described with reference to the drawings.

FIGS. 8A though 8D show cross-sectional structures in respective processsteps of the method for fabricating the semiconductor device of thevariation of the second embodiment. In FIGS. 8A though 8D, eachcomponent also shown in FIGS. 6A though 6D is identified by the samereference numeral.

First, as shown in FIG. 8A, as in the first fabrication method for thefirst embodiment, a first interlevel dielectric film 12 of silicondioxide is deposited to a thickness of about 1000 nm over the entiresurface of a semiconductor substrate 10 including an MOS transistor 30.Subsequently, the surface of the first interlevel dielectric film 12 isplanarized by a CMP process so that the thickness thereof is about 500nm. Then, a contact hole is selectively formed in part of the firstinterlevel dielectric film 12 located over a source region 30 a of theMOS transistor 30. Subsequently, a conductive plug 13 made of a barrierlayer and tungsten is formed in the contact hole. Thereafter, titaniumaluminum nitride, iridium and iridium dioxide are deposited in thisorder by a sputtering process each to a thickness of about 50 nm overthe first interlevel dielectric film 12 including the conductive plug13, thereby forming an oxygen-barrier formation film. Subsequently, theoxygen-barrier formation film is patterned by a lithography process anda dry etching process in a region including the conductive plug 13,thereby forming an oxygen barrier film 14 out of the oxygen-barrierformation film.

Next, as shown in FIG. 8B, a second interlevel dielectric film 15 ofsilicon dioxide is deposited by a CVD process to a thickness of about1000 nm over the entire surface of the first interlevel dielectric film12 as well as the oxygen barrier film 14. Thereafter, the surface of thesecond interlevel dielectric film 15 is planarized by a CMP process sothat the thickness thereof is about 500 nm. Subsequently, an opening 15a for exposing the oxygen barrier film 14 therein is formed in thesecond interlevel dielectric film 15 by a lithography process and a dryetching process. Then, a metal layer of titanium (Ti) is deposited by asputtering or CVD process to a thickness of about 5 nm on the bottom andwall surfaces of the opening 15 a. The metal layer is subjected tooxidation at a temperature of about 650° C. in an oxygen atmosphere forabout 60 minutes so that the metal layer is oxidized, thereby forming anadhesion-layer formation layer of titanium dioxide. Subsequently, theadhesion-layer formation layer is etched back by anisotropic etchingusing a chlorine (Cl₂) gas, thereby forming an adhesion layer 23 out ofthe adhesion-layer formation layer on the wall surface of the opening 15a of the second interlevel dielectric film 15.

Then, as shown in FIG. 8C, a lower-electrode formation film of platinumis deposited by a sputtering or CVD process to a thickness of about 50nm over the second interlevel dielectric film 15 including the opening15 a. Thereafter, the lower-electrode formation film is patterned by alithography process and a dry etching process such that thelower-electrode formation film remains at least on the bottom and wallsurfaces of the opening 15 a, thereby forming a lower electrode 16 withthe adhesion layer 23 interposed between the second interleveldielectric film 15 and the lower electrode 16.

Then, as shown in FIG. 5D, a capacitive insulating film 17 having athickness of about 50 nm and made of a ferroelectric containingstrontium, bismuth, tantalum and niobium is formed by a CVD process onthe second interlevel dielectric film 15 as well as the lower electrode16. Subsequently, an upper electrode 18 of platinum with a thickness ofabout 50 nm is formed through a sputtering or CVD process on thecapacitive insulating film 17. In this manner, a capacitor 19 made ofthe lower electrode 16, the capacitive insulating film 17 and the upperelectrode 18 is formed. In this variation, annealing is also performedat a temperature of about 700° C. for about 10 minutes so as tocrystallize the ferroelectric constituting the capacitive insulatingfilm 17.

Thereafter, though not shown, a required wiring, for example, is formedover the semiconductor substrate 10, and then a passivation film isformed.

As described above, in this variation, the adhesion layer 23 of titaniumdioxide with a thickness of about 5 nm is provided on the wall surfaceof the opening 15 a of the second interlevel dielectric film 15. Thus,it is possible to prevent the lower electrode 16 from peeling off fromthe second interlevel dielectric film 15 during the annealing forcrystallizing the ferroelectric constituting the capacitive insulatingfilm 17.

Since the adhesion layer 23 is made of a metal oxide, the adhesionbetween the lower electrode 16 and the second interlevel dielectric film15 improves due to the reaction between the adhesion layer 23 and thelower electrode 16. In addition, diffusion of metal from the adhesionlayer 23 to the capacitive insulating film 17 is prevented duringannealing performed on the capacitive insulating film 17.

Further, as shown in FIG. 8B, the adhesion layer 23 is formed only onthe wall surface of the opening 15 a and the lower electrode 16 isdirectly connected to the conductive oxygen barrier film 14. Thus, aninsulating material may be used for the adhesion layer 23.

In this variation, the second fabrication method for the firstembodiment, i.e., the method of forming the oxygen barrier film 14 suchthat an opening formed in an interlevel dielectric film is filledtherewith, may also be used for the formation of the oxygen barrier film14.

In the process step shown in FIG. 8C, the formation of the lowerelectrode 16 may be performed through a CMP process, for example, asshown in FIG. 4C, instead of a patterning process using lithography andetching.

Embodiment 3

Hereinafter, a third embodiment of the present invention will bedescribed with reference to the drawings.

FIG. 9 shows a cross-sectional structure of a semiconductor deviceaccording to the third embodiment of the present invention. In FIG. 9,each component also shown in FIG. 1 is identified by the same referencenumeral and the description thereof will be omitted herein.

As shown in FIG. 9, the semiconductor device of the third embodiment hasa stacked cell structure in which a conductive plug 13, an oxygenbarrier film 14 and a capacitor 19 are stacked perpendicularly to thesubstrate surface, as in the first and second embodiments.

The third embodiment is characterized in that a lower electrode 16Bconstituting the capacitor 19 is made of platinum and has a relativelylarge thickness of about 300 nm.

A capacitive insulating film 17 of a ferroelectric having a thickness ofabout 50 nm and formed on the surface of the lower electrode 16B, has aninverted U-bent portion 17 a over the corners between the upper and sidesurfaces of the lower electrode 16B. The bent portion 17 a means thatthe capacitive insulating film 17 has a face substantially perpendicularto the substrate surface, thus reducing the projected area of thecapacitive insulating film 17 onto the substrate surface, while ensuringa required capacitance.

Hereinafter, a method for fabricating the semiconductor device thusconfigured will be described with reference to the drawings.

FIGS. 10A though 10D show cross-sectional structures in respectiveprocess steps of the method for fabricating the semiconductor device ofthe third embodiment. In FIGS. 10A though 10D, each component also shownin FIGS. 2A though 2D is identified by the same reference numeral.

First, as shown in FIG. 10A, as in the first fabrication method for thefirst embodiment, a first interlevel dielectric film 12 of silicondioxide is deposited to a thickness of about 1000 nm over the entiresurface of a semiconductor substrate 10 including an MOS transistor 30.Subsequently, the surface of the first interlevel dielectric film 12 isplanarized by a CMP process so that the thickness thereof is about 500nm. Then, a contact hole is selectively formed in part of the firstinterlevel dielectric film 12 located over a source region 30 a of theMOS transistor 30. Subsequently, a conductive plug 13 made of a barrierlayer and tungsten is formed in the contact hole. Thereafter, titaniumaluminum nitride, iridium and iridium dioxide are deposited in thisorder by a sputtering process each to a thickness of about 50 nm overthe first interlevel dielectric film 12 including the conductive plug13, thereby forming an oxygen-barrier formation film. Subsequently, theoxygen-barrier formation film is patterned by a lithography process anda dry etching process in a region including the conductive plug 13,thereby forming an oxygen barrier film 14 out of the oxygen-barrierformation film.

Next, as shown in FIG. 10B, a second interlevel dielectric film 15 ofsilicon dioxide is deposited by a CVD process to a thickness of about300 nm over the entire surface of the first interlevel dielectric film12 including the oxygen barrier film 14. Thereafter, the surface of thesecond interlevel dielectric film 15 is polished by a CMP process untilthe oxygen barrier film 14 is exposed, thereby planarizing the surfacesof the second interlevel dielectric film 15 and the oxygen barrier film14.

Then, as shown in FIG. 10C, a lower-electrode formation film of platinumis deposited by a sputtering process to a thickness of about 300 nm overthe second interlevel dielectric film 15 including the oxygen barrierfilm 14. Thereafter, the lower-electrode formation film is patterned bya lithography process and a dry etching process such that thelower-electrode formation film remains over the oxygen barrier film 14,thereby forming a thick lower electrode 16B out of the lower-electrodeformation film.

Then, as shown in FIG. 10D, a capacitive insulating film 17 having athickness of about 50 nm and made of a ferroelectric containingstrontium, bismuth, tantalum and niobium is formed by a CVD process tocover the lower electrode 16B. Subsequently, an upper electrode 18 ofplatinum with a thickness of about 50 nm is formed through a sputteringor CVD process to cover the capacitive insulating film 17. In this case,the capacitive insulating film 17 and the upper electrode 18 arepatterned using the same mask. In this manner, a capacitor 19 made ofthe lower electrode 16B, the capacitive insulating film 17 and the upperelectrode 18 is formed. In this embodiment, annealing is also performedat a temperature of about 700° C. for about 10 minutes so as tocrystallize the ferroelectric constituting the capacitive insulatingfilm 17.

Thereafter, though not shown, a required wiring, for example, is formedover the semiconductor substrate 10, and then a passivation film isformed.

As described above, in the fabrication method in the third embodiment,the relatively thick lower electrode 16B is formed after the formationof the oxygen barrier film 14. Thus, processing can be easily performed,as compared to the case where the lower electrode 16B and the oxygenbarrier film 14 are formed simultaneously.

Since the oxygen barrier film 14 in the third embodiment is surroundedwith the second interlevel dielectric film 15, the base area of thelower electrode 16B can be made larger than that of the oxygen barrierfilm 14. Accordingly, no alignment error occurs during the alignmentbetween the lower electrode 16B and the oxygen barrier film 14.

In the third embodiment, the second fabrication method for the firstembodiment, i.e., the method of forming an opening in the secondinterlevel dielectric film 15 and filling in the opening with the oxygenbarrier film 14, may also be used for the formation of the oxygenbarrier film 14.

Embodiment 4

Hereinafter, a fourth embodiment of the present invention will bedescribed with reference to the drawings.

FIG. 11 shows a cross-sectional structure of a semiconductor deviceaccording to the fourth embodiment of the present invention. In FIG. 11,each component also shown in FIG. 1 is identified by the same referencenumeral and the description thereof will be omitted herein.

As shown in FIG. 11, the semiconductor device of the fourth embodimenthas a stacked cell structure in which a conductive plug 13, an oxygenbarrier film 14 and a capacitor 19 are stacked perpendicularly to thesubstrate surface, as in the first through third embodiments.

In the fourth embodiment, instead of increasing the thickness of a lowerelectrode 16 of the capacitor 19, the capacitor 19 is formed over arelatively thick underlying film 24 made of an insulating material andhaving, for example, a columnar shape.

In this structure, a capacitive insulating film 17 of a ferroelectrichaving a thickness of about 50 nm and formed on the surface of the lowerelectrode 16 has an inverted U-bent portion 17 a over the cornersbetween the upper and side surfaces of the underlying film 24. The bentportion 17 a means that the capacitive insulating film 17 has a facesubstantially perpendicular to the substrate surface, thus reducing theprojected area of the capacitive insulating film 17 onto the substratesurface, while ensuring a required capacitance.

In addition, the underlying film 24 allows the lower electrode 16 tohave a relatively small thickness. Thus, the lower electrode 16 itselfis easily processed, and thus a dimension perpendicular to the substratesurface, i.e., the height, can be easily increased as intended.

Hereinafter, a method for fabricating the semiconductor device thusconfigured will be described with reference to the drawings.

FIGS. 12A though 12D show cross-sectional structures in respectiveprocess steps of the method for fabricating the semiconductor device ofthe fourth embodiment. In FIGS. 12A though 12D, each component alsoshown in FIGS. 2A though 2D is identified by the same reference numeral.

First, as shown in FIG. 12A, as in the first fabrication method for thefirst embodiment, a first interlevel dielectric film 12 of silicondioxide is deposited to a thickness of about 1000 nm over the entiresurface of a semiconductor substrate 10 including an MOS transistor 30.Subsequently, the surface of the first interlevel dielectric film 12 isplanarized by a CMP process so that the thickness thereof is about 500nm. Then, a contact hole is selectively formed in part of the firstinterlevel dielectric film 12 located over a source region 30 a of theMOS transistor 30. Subsequently, a conductive plug 13 made of a barrierlayer and tungsten is formed in the contact hole. Thereafter, titaniumaluminum nitride, iridium and iridium dioxide are deposited in thisorder by a sputtering process each to a thickness of about 50 nm overthe first interlevel dielectric film 12 including the conductive plug13, thereby forming an oxygen-barrier formation film. Subsequently, theoxygen-barrier formation film is patterned by a lithography process anda dry etching process in a region including the conductive plug 13,thereby forming an oxygen barrier film 14 out of the oxygen-barrierformation film. Thereafter, a second interlevel dielectric film 15 ofsilicon dioxide is deposited by a CVD process to a thickness of about300 nm over the entire surface of the first interlevel dielectric film12 as well as the oxygen barrier film 14. Then, the surface of thesecond interlevel dielectric film 15 is polished by a CMP process untilthe oxygen barrier film 14 is exposed, thereby planarizing the surfacesof the second interlevel dielectric film 15 and the oxygen barrier film14.

Next, as shown in FIG. 12B, an underlying-film formation film of siliconoxide is deposited by a CVD process to a thickness of about 500 nm overthe entire surface of the second interlevel dielectric film 15 includingthe oxygen barrier film 14. Then, part of the underlying-film formationfilm located over the oxygen barrier film 14 is patterned by alithography process and a dry etching process such that the periphery ofthe oxygen barrier film 14 is exposed, thereby forming an underlyingfilm 24 out of the underlying-film formation film.

Then, as shown in FIG. 12C, a lower-electrode formation film of platinumis deposited by a sputtering or CVD process to a thickness of about 50nm over the second interlevel dielectric film 15 to cover the underlyingfilm 24. Thereafter, the lower-electrode formation film is patterned bya lithography process and a dry etching process, thereby forming a lowerelectrode 16 covering the upper and side surfaces of the underlying film24, out of the lower-electrode formation film. In this case, a lower endportion of the lower electrode 16 is electrically connected to theoxygen barrier film 14 at the periphery of the upper surface of theoxygen barrier film 14.

Then, as shown in FIG. 12D, a capacitive insulating film 17 having athickness of about 50 nm and made of a ferroelectric containingstrontium, bismuth, tantalum and niobium is formed by a CVD process tocover the lower electrode 16. Subsequently, an upper electrode 18 ofplatinum with a thickness of about 50 nm is formed through a sputteringor CVD process to cover the capacitive insulating film 17. In this case,the capacitive insulating film 17 and the upper electrode 18 arepatterned using the same mask. In this manner, a capacitor 19 made ofthe lower electrode 16, the capacitive insulating film 17 and the upperelectrode 18 is formed. In this embodiment, annealing is also performedat a temperature of about 700° C. for about 10 minutes so as tocrystallize the ferroelectric constituting the capacitive insulatingfilm 17.

Thereafter, though not shown, a required wiring, for example, is formedover the semiconductor substrate 10, and then a passivation film isformed.

As described above, in the fourth embodiment, the columnar underlyingfilm 24, which allows the lower electrode 16 to have a faceperpendicular to the substrate surface, i.e., which is an auxiliarymember that serves to make the structure three-dimensional, is formed onthe oxygen barrier film 14. Accordingly, an excellent processability isexhibited, as compared to the case where the lower electrode 16 ofplatinum itself has a columnar structure.

In addition, since the underlying film 24 is formed such that theperiphery of the upper surface of the oxygen barrier film 14 is exposedtherefrom, an electrical connection is established between the oxygenbarrier film 14 and the lower electrode 16. Thus, the underlying film 24does not have to be made of a conductive material.

The underlying film 24 is not limited to silicon oxide, but may be madeof any material that is easily processed. A material for the underlyingfilm 24 may or may not be conductive. If conductive titanium aluminumoxide is used for the underlying film 24, the adhesion to the platinumlower electrode 16 is improved.

In the fourth embodiment, the second fabrication method for the firstembodiment, to i.e., the method of forming an opening in the secondinterlevel dielectric film 15 and filling in the opening with the oxygenbarrier film 14, may also be used for the formation of the oxygenbarrier film 14.

Variation of Embodiment 4

Hereinafter, a variation of the fourth embodiment of the presentinvention will be described with reference to the drawings.

FIG. 13 shows a cross-sectional structure of a semiconductor deviceaccording to the variation of the fourth embodiment of the presentinvention. In FIG. 13, each component also shown in FIG. 11 isidentified by the same reference numeral and the description thereofwill be omitted herein.

The semiconductor device of this variation is characterized in that anadhesion layer 25 of titanium dioxide with a thickness of about 5 nm isformed on the side surface of an underlying film 24.

The adhesion layer 25 improves the adhesion between the underlying film24 of silicon oxide and a lower electrode 16 of platinum, so that thelower electrode 16 does not easily peel off from the underlying film 24.

Since the adhesion layer 25 is made of insulating titanium dioxide, itis necessary to form the adhesion layer 25 such that a barrier film 14is exposed therefrom. However, if a conductive material such as iridiumoxide is used, the adhesion layer 25 may cover the oxygen barrier film14.

Hereinafter, a method for fabricating the semiconductor device thusconfigured will be described with reference to the drawings.

FIGS. 14A though 14D show cross-sectional structures in respectiveprocess steps of the method for fabricating the semiconductor device ofthe variation of the fourth embodiment. In FIGS. 14A though 14D, eachcomponent also shown in FIGS. 12A though 12D is identified by the samereference numeral.

First, as shown in FIG. 14A, as in the first fabrication method for thefirst embodiment, a first interlevel dielectric film 12 of silicondioxide is deposited to a thickness of about 1000 nm over the entiresurface of a semiconductor substrate 10 including an MOS transistor 30.Subsequently, the surface of the first interlevel dielectric film 12 isplanarized by a CMP process so that the thickness thereof is about 500nm. Then, a contact hole is selectively formed in part of the firstinterlevel dielectric film 12 located over a source region 30 a of theMOS transistor 30. Subsequently, a conductive plug 13 made of a barrierlayer and tungsten is formed in the contact hole. Thereafter, titaniumaluminum nitride, iridium and iridium dioxide are deposited in thisorder by a sputtering process each to a thickness of about 50 nm overthe first interlevel dielectric film 12 including the conductive plug13, thereby forming an oxygen-barrier formation film. Subsequently, theoxygen-barrier formation film is patterned by a lithography process anda dry etching process in a region including the conductive plug 13,thereby forming an oxygen barrier film 14 out of the oxygen-barrierformation film. Thereafter, a second interlevel dielectric film 15 ofsilicon dioxide is deposited by a CVD process to a thickness of about300 nm over the entire surface of the first interlevel dielectric film12 including the oxygen barrier film 14. Then, the surface of the secondinterlevel dielectric film 15 is polished by a CMP process until theoxygen barrier film 14 is exposed, thereby planarizing the surfaces ofthe second interlevel dielectric film 15 and the oxygen barrier film 14.

Next, as shown in FIG. 14B, an underlying-film formation film of siliconoxide is deposited by a CVD process to a thickness of about 500 nm overthe entire surface of the second interlevel dielectric film 15 includingthe oxygen barrier film 14. Then, part of the underlying-film formationfilm located over the oxygen barrier film 14 is patterned by alithography process and a dry etching process such that the periphery ofthe oxygen barrier film 14 is exposed, thereby forming an underlyingfilm 24 out of the underlying-film formation film. Subsequently, a metallayer of titanium is deposited by a sputtering or CVD process to athickness of about 5 nm over the second interlevel dielectric film 15 tocover the underlying film 24. Thereafter, the metal layer is subjectedto oxidation at a temperature of about 650° C. in an oxygen atmospherefor about 60 minutes so that the metal layer is oxidized, therebyforming an adhesion layer 25 of titanium dioxide.

Then, as shown in FIG. 14C, the adhesion layer 25 is etched back byanisotropic dry etching using, for example, a chlorine (Cl₂) gas suchthat part of the adhesion layer 25 remains on the side surface of theunderlying film 24. In this case, it is also necessary to expose theperiphery of the upper surface of the oxygen barrier film 14.

Then, as shown in FIG. 14D, a lower-electrode formation film of platinumis deposited by a sputtering or CVD process to a thickness of about 50nm over the second interlevel dielectric film 15 as well as theunderlying film 24 and the adhesion layer 25. Thereafter, thelower-electrode formation film is patterned by a lithography process anda dry etching process, thereby forming a lower electrode 16 covering theunderlying film 24 with the adhesion layer 25 interposed between thelower electrode 16 and the side surface of the underlying film 24, outof the lower-electrode formation film. In this case, a lower end portionof the lower electrode 16 is electrically connected to the oxygenbarrier film 14 at the periphery of the upper surface thereof. Then, acapacitive insulating film 17 having a thickness of about 50 nm and madeof a ferroelectric containing strontium, bismuth, tantalum and niobiumis formed by a CVD process to cover the lower electrode 16.Subsequently, an upper electrode 18 of platinum with a thickness ofabout 50 nm is formed through a sputtering or CVD process to cover thecapacitive insulating film 17. In this case, the capacitive insulatingfilm 17 and the upper electrode 18 are patterned using the same mask. Inthis manner, a capacitor 19 made of the lower electrode 16, thecapacitive insulating film 17 and the upper electrode 18 is formed. Inthis variation, annealing is also performed at a temperature of about700° C. for about 10 minutes so as to crystallize the ferroelectricconstituting the capacitive insulating film 17.

Thereafter, though not shown, a required wiring, for example, is formedover the semiconductor substrate 10, and then a passivation film isformed.

As described above, in this variation, the adhesion layer 25 of titaniumdioxide with a thickness of about 5 nm is provided on the side surfaceof the underlying film 24. Accordingly, it is possible to prevent thelower electrode 16 from peeling off from the underlying film 24 duringthe annealing for crystallizing the ferroelectric constituting thecapacitive insulating film 17.

In addition, since the adhesion layer 25 is made of a metal oxide, theadhesion between the lower electrode 16 and the underlying film 24improves due to the reaction between the adhesion layer 25 and the lowerelectrode 16. Moreover, diffusion of metal from the adhesion layer 25 tothe capacitive insulating film 17 is prevented during annealingperformed on the capacitive insulating film 17.

Furthermore, the adhesion layer 25 is formed such that the oxygenbarrier film 14 is exposed therefrom as shown in FIG. 14C, and the lowerelectrode 16 is directly connected to the conductive oxygen barrier film14. Accordingly, the adhesion layer 25 may or may not be conductive.

In this variation, the second fabrication method for the firstembodiment, i.e., the method of forming the oxygen barrier film 14 suchthat an opening formed in an interlevel dielectric film is filledtherewith, may also be used for the formation of the oxygen barrier film14.

Embodiment 5

Hereinafter, a fifth embodiment of the present invention will bedescribed with reference to the drawings.

FIG. 15 shows a cross-sectional structure of a semiconductor deviceaccording to the fifth embodiment of the present invention. In FIG. 15,each component also shown in FIG. 1 is identified by the same referencenumeral and the description thereof will be omitted herein.

As shown in FIG. 15, the semiconductor device of the fifth embodimenthas a stacked cell structure in which a conductive plug 13, an oxygenbarrier film 14 and a capacitor 19 are stacked perpendicularly to thesubstrate surface, as in the first through fourth embodiments.

The fifth embodiment is characterized in that a lower electrode 16Cconstituting the capacitor 19 is made of platinum in the shape of abottomed cylinder and has a thickness of about 50 nm and a height ofabout 500 nm. In addition, a ferroelectric capacitive insulating film 17and a platinum upper electrode 18 stacked thereon, which constitute thecapacitor 19, are formed, following the bottom surface and the sidewallinner and outer surfaces of the lower electrode 16C.

This structure allows the capacitive insulating film 17 to have a U-bentportion 17 a on contiguous bottom and wall surfaces of thebottomed-cylindrical lower electrode 16C and an inverted U-bent portion17 a over the rim of the bottomed-cylindrical lower electrode 16C. Thesebent portions 17 a mean that the capacitive insulating film 17 has facessubstantially perpendicular to the substrate surface on the sidewallinner and outer surfaces of the bottomed-cylindrical lower electrode16C. Thus, the capacitance is remarkably increased, while the projectedarea of the capacitive insulating film 17 onto the substrate surface isreduced.

Hereinafter, a method for fabricating the semiconductor device thusconfigured will be described with reference to the drawings.

FIGS. 16A though 16D show cross-sectional structures in respectiveprocess steps of the method for fabricating the semiconductor device ofthe fifth embodiment. In FIGS. 16A though 16D, each component also shownin FIGS. 2A though 2D is identified by the same reference numeral.

First, as shown in FIG. 16A, as in the first fabrication method for thefirst embodiment, a first interlevel dielectric film 12 of silicondioxide is deposited to a thickness of about 1000 nm over the entiresurface of a semiconductor substrate 10 including an MOS transistor 30.Subsequently, the surface of the first interlevel dielectric film 12 isplanarized by a CMP process so that the thickness thereof is about 500nm. Then, a contact hole is selectively formed in part of the firstinterlevel dielectric film 12 located over a source region 30 a of theMOS transistor 30. Subsequently, a conductive plug 13 made of a barrierlayer and tungsten is formed in the contact hole. Thereafter, titaniumaluminum nitride, iridium and iridium dioxide are deposited in thisorder by a sputtering process each to a thickness of about 50 nm overthe first interlevel dielectric film 12 including the conductive plug13, thereby forming an oxygen-barrier formation film. Subsequently, theoxygen-barrier formation film is patterned by a lithography process anda dry etching process in a region including the conductive plug 13,thereby forming an oxygen barrier film 14 out of the oxygen-barrierformation film.

Next, as shown in FIG. 16B, a second interlevel dielectric film 15 ofsilicon dioxide is deposited by a CVD process to a thickness of about1000 nm over the entire surface of the first interlevel dielectric film12 including the oxygen barrier film 14. Then, the surface of the secondinterlevel dielectric film 15 is planarized so that the thicknessthereof is about 500 nm. Thereafter, an opening 15 a for exposing theoxygen barrier film 14 therein is formed by a lithography process and adry etching process in the second interlevel dielectric film 15, andthen a lower-electrode formation film of platinum is deposited by asputtering or CVD process to a thickness of about 50 nm over the secondinterlevel dielectric film 15 including the opening 15 a. Thereafter,part of the lower-electrode formation film located on the secondinterlevel dielectric film 15 is removed so that part of thelower-electrode formation film remains on the bottom and wall surfacesof the opening 15 a, thereby forming a lower electrode 16C in the shapeof a bottomed cylinder out of the lower-electrode formation film.

Next, as shown in FIG. 16C, part of the second interlevel dielectricfilm 15 is removed by etching using hydrofluoric acid vapor until thesurface thereof is lowered to substantially the same level as that ofthe upper surface of the oxygen barrier film 14, thereby exposing thebottom surface of and sidewall inner and outer surfaces of the lowerelectrode 16C.

Then, as shown in FIG. 16D, a capacitive insulating film 17 having athickness of about 50 nm and made of a ferroelectric containingstrontium, bismuth, tantalum and niobium is formed by a CVD process onthe second interlevel dielectric film 15 to cover the exposed bottomsurface and sidewall inner and outer surfaces of the lower electrode16C. Subsequently, an upper electrode 18 of platinum with a thickness ofabout 50 nm is formed through a sputtering or CVD process on thecapacitive insulating film 17, following the surface of the capacitiveinsulating film 17. In this case, the capacitive insulating film 17 andthe upper electrode 18 are patterned using the same mask. In thismanner, a capacitor 19 made of the lower electrode 16C, the capacitiveinsulating film 17 and the upper electrode 18 is formed. In thisembodiment, annealing is also performed at a temperature of about 700°C. for about 10 minutes so as to crystallize the ferroelectricconstituting the capacitive insulating film 17.

Thereafter, though not shown, a required wiring, for example, is formedover the semiconductor substrate 10, and then a passivation film isformed.

As described above, in the fabrication method in the fifth embodiment,part of the second interlevel dielectric film 15 is etched and removeduntil the surface of the second interlevel dielectric film 15 is loweredto substantially the same level as that of the upper surface of theoxygen barrier film 14. Thus, the capacitive insulating film 17 and theupper electrode 18 can also be formed on the sidewall outer surface ofthe lower electrode 16C.

Embodiment 6

Hereinafter, a sixth embodiment of the present invention will bedescribed with reference to the drawings.

FIG. 17 shows a cross-sectional structure of a semiconductor deviceaccording to the sixth embodiment of the present invention. In FIG. 17,each component also shown in FIG. 1 is identified by the same referencenumeral and the description thereof will be omitted herein.

As shown in FIG. 17, the semiconductor device of the sixth embodimenthas a stacked cell structure in which a conductive plug 13, an oxygenbarrier film 14 and a capacitor 19 are stacked perpendicularly to thesubstrate surface, as in the first through fifth embodiments.

The sixth embodiment is characterized in that a lower electrode 16constituting the capacitor 19 is formed and follows the bottom surfaceof and sidewall outer and inner surfaces of a shape-sustaining film 26of titanium oxide that is in the shape of a bottomed cylinder and has athickness of about 20 nm and a height of about 500 nm. In addition, anend portion of the lower electrode 16 is electrically connected to theperiphery of the upper surface of the oxygen barrier film 14. Further, aferroelectric capacitive insulating film 17 and a platinum upperelectrode 18 stacked thereon that constitute the capacitor 19 areformed, following the lower electrode 16.

This structure allows the capacitive insulating film 17 to have a U-bentportion 17 a over contiguous bottom and cylindrical wall surfaces of thebottomed-cylindrical shape-sustaining film 26 and an inverted U-bentportion 17 a over the rim of the bottomed-cylindrical shape-sustainingfilm 26. These bent portions 17 a mean that the capacitive insulatingfilm 17 has faces substantially perpendicular to the substrate surfaceon the sidewall inner and outer surfaces of the bottomed-cylindricalshape-sustaining film 26. Thus, the capacitance is remarkably increased,while the projected area of the capacitive insulating film 17 onto thesubstrate surface is reduced. In addition, the range of choice of amaterial for the bottomed cylinder is extended as compared to the casewhere the bottomed cylinder is the lower electrode 16. Therefore, byselecting a material which is stable in shape during processing, theshape of the bottomed cylinder is stabilized.

The shape-sustaining film 26 may or may not be conductive so long as thefilm 26 exhibits excellent adhesion to the oxygen barrier film 14 andhigh hardness.

Hereinafter, a method for fabricating the semiconductor device thusconfigured will be described with reference to the drawings.

FIGS. 18A though 18D show cross-sectional structures in respectiveprocess steps of the method for fabricating the semiconductor device ofthe sixth embodiment. In FIGS. 18A though 18D, each component also shownin FIGS. 2A though 2D is identified by the same reference numeral.

First, as shown in FIG. 18A, as in the first fabrication method for thefirst embodiment, a first interlevel dielectric film 12 of silicondioxide is deposited to a thickness of about 1000 nm over the entiresurface of a semiconductor substrate 10 including an MOS transistor 30.Subsequently, the surface of the first interlevel dielectric film 12 isplanarized by a CMP process so that the thickness thereof is about 500nm. Then, a contact hole is selectively formed in part of the firstinterlevel dielectric film 12 located over a source region 30 a of theMOS transistor 30. Subsequently, a conductive plug 13 made of a barrierlayer and tungsten is formed in the contact hole. Thereafter, titaniumaluminum nitride, iridium and iridium dioxide are deposited in thisorder by a sputtering process each to a thickness of about 50 nm overthe first interlevel dielectric film 12 including the conductive plug13, thereby forming an oxygen-barrier formation film. Subsequently, theoxygen-barrier formation film is patterned by a lithography process anda dry etching process in a region including the conductive plug 13,thereby forming an oxygen barrier film 14 out of the oxygen-barrierformation film.

Next, as shown in FIG. 18B, a second interlevel dielectric film 15 ofsilicon dioxide is deposited by a CVD process to a thickness of about1000 nm over the entire surface of the first interlevel dielectric film12 as well as the oxygen barrier film 14. Then, the surface of thesecond interlevel dielectric film 15 is planarized by a CMP process sothat the thickness thereof is about 500 nm. Thereafter, an opening 15 afor exposing a center part of the upper surface of the oxygen barrierfilm 14 therein is formed by a lithography process and a dry etchingprocess in the second interlevel dielectric film 15. Subsequently, ametal film of titanium is deposited by a sputtering or CVD process to athickness of about 10 nm over the second interlevel dielectric film 1Sincluding the opening 15 a. The metal film is subjected to oxidation ata temperature of about 650° C. in an oxygen atmosphere for about 60minutes so that the metal film is oxidized, thereby forming ashape-sustaining-film formation film. Then, part of theshape-sustaining-film formation film located on the second interleveldielectric film 15 is removed by a CMP process on a resist etch backprocess so that part of the shape-sustaining-film formation film remainson the bottom and wall surfaces of the opening 15 a, thereby forming ashape-sustaining film 26 in the shape of a bottomed cylinder, out of theshape-sustaining-film formation film.

Then, as shown in FIG. 18C, part of the second interlevel dielectricfilm 15 is removed by etching using hydrofluoric acid vapor so that theperiphery of the upper surface of the oxygen barrier film 14 is exposed,thereby exposing the sidewall outer surface of the shape-sustaining film26. Thereafter, a lower-electrode formation film of platinum isdeposited by a sputtering or CVD process to a thickness of about 50 nmover the second interlevel dielectric film 15 so as to cover the exposedbottom surface and sidewall inner and outer surfaces of theshape-sustaining film 26. Subsequently, the lower-electrode formationfilm is patterned by a lithography process and a dry etching process ina region including the shape-sustaining film 26, thereby forming a lowerelectrode 16 whose end portion is connected to the periphery of theupper surface of the oxygen barrier film 14, out of the lower-electrodeformation film.

Then, as shown in FIG. 18D, a capacitive insulating film 17 having athickness of about 50 nm and made of a ferroelectric containingstrontium, bismuth, tantalum and niobium is formed by a CVD process onthe second interlevel dielectric film 15 to cover the exposed surface ofthe lower electrode 16. Subsequently, an upper electrode 18 of platinumwith a thickness of about 50 nm is formed through a sputtering or CVDprocess on the capacitive insulating film 17, following the surface ofthe capacitive insulating film 17. In this case, the capacitiveinsulating film 17 and the upper electrode 18 are patterned using thesame mask. In this manner, a capacitor 19 made of the lower electrode16, the capacitive insulating film 17 and the upper electrode 18 isformed. In this embodiment, annealing is also performed at a temperatureof about 700° C. for about 10 minutes so as to crystallize theferroelectric constituting the capacitive insulating film 17.

Thereafter, though not shown, a required wiring, for example, is formedover the semiconductor substrate 10, and then a passivation film isformed.

As described above, in the fabrication method in the sixth embodiment,part of the second interlevel dielectric film 15 is etched and removeduntil the upper surface of the oxygen barrier film 14 is exposedtherefrom. Thus, the lower electrode 16, the capacitive insulating film17 and the upper electrode 18 can also be formed on the sidewall outersurface of the shape-sustaining film 26. In addition, an electricalcontinuity is established between the lower electrode 16 and the oxygenbarrier film 14.

Since the shape-sustaining film 26 is made of a metal oxide, theadhesion to the lower electrode 16 improves due to the reaction betweenthe shape-sustaining film 26 and the lower electrode 16. In addition,diffusion of metal from the shape-sustaining film 26 to the capacitiveinsulating film 17 is prevented during annealing performed on thecapacitive insulating film 17.

In the first through sixth embodiments, the capacitive insulating filmis made of a ferroelectric. However, the capacitive insulating film isnot limited to a ferroelectric but may be made of a high-κ orparaelectric material.

What is claimed is:
 1. A semiconductor device, comprising: a conductive plug formed through a first interlevel dielectric film formed on a substrate; a conductive oxygen barrier film formed on the first interlevel dielectric film so as to be electrically connected to the conductive plug and to cover the conductive plug; a second interlevel dielectric film formed on a sidewall of the oxygen barrier film and being planarized to substantially the same height as the oxygen barrier film; a third interlevel dielectric film formed on the second interlevel dielectric film and having an opening in which the oxygen barrier film is exposed; a lower electrode formed to follow bottom and wall surfaces of the opening formed in the third interlevel dielectric film and to be connected to the oxygen barrier film; a capacitive insulating film formed on the lower electrode, following the lower electrode; and an upper electrode formed on the capacitive insulating film, following the capacitive insulating film, wherein the capacitive insulating film has contiguous portions located over the bottom and wall surfaces of the opening, respectively, to form a U-bent portion that extends along the direction in which the conductive plug penetrates through the first interlevel dielectric film.
 2. The device of claim 1, including an adhesion layer that enhances the adhesion of the lower electrode to the second interlevel dielectric film and is interposed between the bottom surface of the opening and the lower electrode and between the wall surface of the opening and the lower electrode.
 3. The device of claim 1, including an adhesion layer that enhances the adhesion of the lower electrode to the second interlevel dielectric film and is interposed between the wall of the opening and the lower electrode.
 4. The device of claim 3, wherein the adhesion layer is made of a metal oxide.
 5. The device of claim 1, wherein the capacitive insulating film is made of a ferroelectric or a high-dielectric-constant material.
 6. A semiconductor device, comprising: a conductive plug formed through a first interlevel dielectric film formed on a substrate; a conductive oxygen barrier film formed on the first interlevel dielectric film so as to be electrically connected to the conductive plug and to cover the conductive plug; a second interlevel dielectric film formed on a sidewall of the oxygen barrier film and being planarized to substantially the same height as the oxygen barrier film; a lower electrode having a relatively large thickness and formed on the oxygen barrier film so as to be connected to the oxygen barrier film and to cover the oxygen barrier film; a capacitive insulating film formed on upper and side surfaces of the lower electrode; and an upper electrode formed on the capacitive insulating film, following the capacitive insulating film, wherein the capacitive insulating film has contiguous portions located over the upper and side surfaces of the lower electrode, respectively, to form an inverted U-bent portion that extends along the direction in which the conductive plug penetrates through the first interlevel dielectric film.
 7. The device of claim 6, wherein the capacitive insulating film is made of a ferroelectric or a high-dielectric-constant material.
 8. A semiconductor device, comprising: A conductive plug formed through a first interlevel dielectric film formed on a substrate; a conductive oxygen barrier film formed on the first interlevel dielectric film so as to be electrically connected to the conductive plug and to cover the conductive plug; a second interlevel dielectric film formed on a sidewall of the oxygen barrier film and being planarized to substantially the same height as the oxygen barrier film; an underlying film formed on the oxygen barrier film and having a relatively large thickness; a lower electrode formed on upper and side surfaces of the underlying film, an end portion of the lower electrode being connected to the oxygen barrier film; a capacitive insulating film formed on the lower electrode, following the lower electrode; and an upper electrode formed on the capacitive insulating film, following the capacitive insulating film, wherein the capacitive insulating film has contiguous portions located over the upper and side surfaces of the underlying film, respectively, to form an inverted U-bent portion that extends along the direction in which the conductive plug penetrates through the first interlevel dielectric film.
 9. The device of claim 8, including an adhesion layer that enhances the adhesion of the lower electrode to the underlying film and is interposed between the underlying film and the lower electrode.
 10. The device of claim 9, wherein the adhesion layer is made of a metal oxide.
 11. The device of claim 8, wherein the capacitive insulating film is made of a ferroelectric or a high-dielectric-constant material.
 12. A semiconductor device, comprising: a conductive plug formed through a first interlevel dielectric film formed on a substrate; a conductive oxygen barrier film formed on the first interlevel dielectric film so as to be electrically connected to the conductive plug and to cover the conductive plug; a lower electrode in the shape of a bottomed cylinder formed on the oxygen barrier film to be connected to the oxygen barrier film; a second interlevel dielectric film formed on a sidewall of the oxygen barrier film and being planarized to substantially the same height as the oxygen barrier film; a capacitive insulating film formed on the lower electrode, following the bottom surface of, and sidewall inner and outer surfaces of, the lower electrode; and an upper electrode formed on the capacitive insulating film, following the capacitive insulating film, wherein the capacitive insulating film has at least contiguous portions located over the bottom of, and the sidewall inner wall surface of, the lower electrode, respectively, to form a U-bent portion that extends along the direction in which the conductive plug penetrates through the first interlevel dielectric film.
 13. The device of claim 12, wherein the capacitive insulating film is made of a ferroelectric or a high-dielectric-constant material.
 14. A semiconductor device, comprising: a conductive plug formed through a first interlevel dielectric film formed on a substrate; a conductive oxygen barrier film formed on the first interlevel dielectric film so as to be electrically connected to the conductive plug and to cover the conductive plug; a shape-sustaining film in the shape of a bottomed cylinder formed on the oxygen barrier film; a second interlevel dielectric film formed on a sidewall of the oxygen barrier film and being planarized to substantially the same height as the ox yen barrier film; a lower electrode formed on the shape-sustaining film, following the bottom surface of, and sidewall inner and outer surfaces of, the shape-sustaining film, an end portion of the lower electrode being connected to the oxygen barrier film; a capacitive insulating film formed on the lower electrode, following the lower electrode; and an upper electrode formed on the capacitive insulating film, following the capacitive insulating film, wherein the capacitive insulating film has at least contiguous portions located over the bottom and sidewall inner surfaces of the shape-sustaining film, respectively, to form a U-bent portion that extends along the direction in which the conductive plug penetrates through the first interlevel dielectric film.
 15. The device of claim 14, wherein the shape-sustaining film is made of a metal oxide.
 16. The device of claim 14, wherein the capacitive insulating film is made of a ferroelectric or a high-dielectric-constant material. 